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  this is information on a product in full production. october 2012 doc id 023273 rev 1 1/8 8 stth30w02c turbo 2 ultrafast high voltage rectifier datasheet ? production data features ultrafast switching low reverse recovery current low thermal resistance reduces switching losses ecopack ? 2 compliant component description the STTH30W02CW, uses st turbo 2, 200 v technology. it is especially suited to be used for dc/dc and dc/ac converters in secondary stage of mig/mma/tig welding machine. housed in st's to-247, this device offers high power integration for all welding machines and industrial applications. table 1. device summary symbol value i f(av) 2 x 15 a v rrm 200 v t rr (typ) 20 ns t j (max) 175 c v f (typ) 0.90 v k a1 a2 a1 a2 k to-247 STTH30W02CW www.st.com
characteristics stth30w02c 2/8 doc id 023273 rev 1 1 characteristics when diodes 1 and 2 are used simultaneously: t j (diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) to evaluate the conduction losses use the following equation: p = 0.8 x i f(av) + 0.0167 i f 2 (rms) table 2. absolute ratings (limiting values, at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) forward rms current 30 a i f(av) average forward current, ? = 0.5 t c = 125 c per diode 15 a t c = 115c per device 30 i fsm surge non repetitive forward current t p = 10 ms sinusoidal 140 a t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature + 175 c table 3. thermal resistance symbol parameter value unit r th(j-c) junction to case per diode 2.5 c / w total 1.5 r th(c) coupling 0.5 table 4. static electrical characteristics symbol parameter test co nditions min. typ max. unit i r (1) 1. pulse test: t p = 5 ms, ? < 2% reverse leakage current t j = 25 c v r = v rrm 10 a t j = 125 c 5 50 v f (2) 2. pulse test: t p = 380 s, ? < 2% forward voltage drop t j = 25 c i f = 15a 1.20 v t j = 150 c 0.90 1.05 t j = 25 c i f = 30 a 1.4 t j = 150 c 1.1 1.3
stth30w02c characteristics doc id 023273 rev 1 3/8 table 5. dynamic electrical characteristics symbol parameter test conditions min. typ max. unit i rm reverse recovery current t j = 125 c i f = 15 a, v r = 160 v di f /dt = -200 a/s 79 a q rr reverse recovery charge 160 nc s factor softness factor 0.3 t rr reverse recovery time t j = 25 c i f = 1 a, v r = 30 v di f /dt = -100 a/s 20 25 ns t fr forward recovery time t j = 25 c i f = 15 a, v fr = 1.1 v di f /dt = 100 a/s 200 ns v fp forward recovery voltage t j = 25 c 1.6 2.4 v figure 1. average forward power dissipation versus average forward current (per diode) figure 2. forward voltage drop versus forward current (per diode) p (w) f(av) 0 4 8 12 16 20 24 02468101214161820 = tp/t tp t i f(av) (a) = 0.05 1 = 0. = 0.2 = 0.5 = 1 i fm (a) 0.1 1.0 10.0 100.0 1000.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t j =150 c (typical values) t j =150c (maximum values) t j = 25 c (maximum values) v fm (v) figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values, per diode) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s) 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 500 i rm (a) i f = i f(av) v r = 160 v t j =125 c di f /dt(a/s)
characteristics stth30w02c 4/8 doc id 023273 rev 1 figure 5. reverse recovery time versus di f /dt (typical values, per diode) figure 6. reverse recovery charges versus di f /dt (typical values, per diode) t rr (ns) 0 10 20 30 40 50 60 70 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =160 v t j =125 c di f /dt(a/s) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 q rr (nc) i f =i f(av) v r =160 v t j =125 c di f /dt(a/s) figure 7. relative variations of dynamic parameters versus junction temperature figure 8. reverse recovery softness factor versus di f /dt (typical values, per diode) t j (c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 i rm q rr s factor i f =i f(av) v r =160 v reference: t j =125 c t j (c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 s factor i f =i f(av) v r =160 v t j =125 c di f /dt(a/s) figure 9. forward recovery time versus di f /dt (typical values, per diode) figure 10. transient peak forward voltage versus di f /dt (typical values, per diode) t fr (ns) 0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v fr =1.1 v t j =125 c di f /dt(a/s) 0 1 2 3 4 5 0 50 100 150 200 250 300 350 400 450 500 v fp (v) i f =i f(av) t j =125 c di f /dt(a/s)
stth30w02c characteristics doc id 023273 rev 1 5/8 figure 11. junction capacitance versus reverse voltage applied (typical values, per diode) c(pf) 10 100 1 10 100 1000 v r (v) f=1 mhz v osc =30 mv rms t j =25 c
package information stth30w02c 6/8 doc id 023273 rev 1 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) recommended torque value: 0.55 nm (1.0 nm maximum) in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. to-247 dimensions ref. dimensions millimeters inches min. typ. max. min. typ max. a 4.85 5.15 0.191 0.203 a1 2.20 2.60 0.086 0.102 b 1.00 1.40 0.039 0.055 b1 2.00 2.40 0.078 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.015 0.031 d (1) 1. dimension d plus gate protrusion does not exceed 20.5 mm 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e 5.30 5.45 5.60 0.209 0.215 0.220 l 14.20 14.80 0.559 0.582 l1 3.70 4.30 0.145 0.169 l2 18.50 typ. 0.728 typ. ? p (2) 2. resin thickness around the mounti ng hole is not less than 0.9 mm 3.55 3.65 0.139 0.143 ? r 4.50 5.50 0.177 0.217 s 5.30 5.50 5.70 0.209 0.216 0.224 e l2 s d c a1 back view heat-sink plane l1 l b1 b2 b a e 1 1 2 2 3 3 ? r ? p
stth30w02c ordering information doc id 023273 rev 1 7/8 3 ordering information 4 revision history table 7. ordering information ordering type marking package weight base qty delivery mode STTH30W02CW STTH30W02CW to-247 4.46 g 50 tube table 8. document revision history date revision changes 05-oct-2012 1 first issue.
stth30w02c 8/8 doc id 023273 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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